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教学内容安排与学习大纲：
第一章 Device Isolation, Contacts and Metallization (8学时)
1.) Device Isolation (Locos, STI and SOI)
2.) Contacts Introduction (Schottky Contacts, Ohmic Contacts and Alloyed Contacts)
3.) Advanced Salicides Process
4.) Metallization and Interconnect
第二章 Well Formation (6学时)
1.) CMOS Structure Evolution
2.) Retrograde Wells, Super Steep Retrograde Well
3.) Source/Drain Engineering and Punchthrough Implant
第三章 Gat Oxide Technology (6学时)
1.) Structure of Traditional Gate Oxide
2.) Defects, Dielectric Breakdown and Leakage Current
第四章
3.) Gate Oxide Reliability and Limits of Traditional Gate Oxide
4.) Introduction to High K and Metal Gate
5.) High K/Metal Gate Candidates and Related Issues
6.) High K/Metal Gate Integration Scheme
第四章 Low K Dielectric (4学时)
1.) Introduction to Low K Dielectrics
2.) Desired Characteristics of Low K Dielectrics
3.) Low K Materials Evolution
第五章 CMOS Scaling (6学时)
1.) The Basic Behavior of Long Channel Device
2.) The Basic Behavior of Short Channel Device
3.) CMOS Scaling Theory
A Advanced CMOS Integration Scheme (4学时)
1.) STI and Well Formation
2.) Gate Module, Source/Drain and Contacts
第七章 Introduction on How to Anchor a CMOS Research Program (4学时)
1.) Overall Project Management Methodology
2.) Device Design Methodology
第八章 SOI Technology (4学时)
第九章 GaAs Technology (3学时)
第十章 Silicon Bipolr Technology (3学时)
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